Rekayasa Antarmuka ETL dan HTM Bebas Dopan untuk Sel Surya Perovskit Efisien dan Stabil

Abstract

Perovskite solar cells (PSCs) have demonstrated remarkable power conversion efficiencies (PCEs), yet their path to commercialization is critically hindered by significant non-radiative recombination losses and long-term operational instability. These degradation pathways and efficiency losses are predominantly located at the interfaces between the perovskite absorber and the charge transport layers (ETL and HTM). The state-of-the-art often relies on high-temperature processed TiO₂ as the ETL and the expensive, hygroscopic dopant-reliant Spiro-OMeTAD as the HTM, which themselves are primary sources of instability. The research gap is the urgent need for stable, low-cost, and particularly dopant-free interfacial materials that can be processed at low temperatures. This literature review synthesizes and analyzes recent progress in interface engineering, focusing on low-temperature ETL alternatives (e.g., fullerene derivatives and ZnO) and the development of high-performance dopant-free HTMs. We conclude that replacing the problematic Spiro-OMeTAD with stable, dopant-free alternatives, such as the polymer P3HT or robust inorganic materials like NiOₓ and CuGaO₂, is the most critical and effective strategy for realizing efficient, stable, and commercially viable perovskite photovoltaics.